| 摘要 |
The method is used in micro-electronics. It increases the quality of the thin-film integrated circuits and provides savings of the high-temperature material. A preliminarily prepared superconductive material with the needed characteristics and compound is used. It is in powder form, the grain size is from 1 to 50 microns depending on the required thickness of the layer and represents 68 percent of the mixture. A 32 percent paste of boron silicate glass, bismuth oxide, ethylcelulose, dibutylphthalate, surfactant and turpentine in the proportion of 15:18:8,3:8,7:0,6:49,4 is added to the material. Then the mixture is homogenized to a paste, put by means of a screen-press on a ceramic block and dried in an infra-red furnace with a profile from room temperature of up to 150 degrees C, at 50 degrees C/ min speed. It remains two minutes at this temperature and afterwards it is cooled down to room temperature. Afterwards follows the firing in a furnace with a profile of room temperature up to 510 degrees C, at 33 degrees C/ min speed, remaining there for 1 min and cooling to room temperature at 33 degrees C/ min speed.
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