发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To make a capacitor large enough in capacity keeping it small in size by a method wherein a capacitor composed of a storage node provided with a cylinder whole side is open and electrically connected to a transistor and a cell plate which fills the inside of the cylinder and covers the storage node. CONSTITUTION:A polycrystalline silicon storage node 11 of shelf structure which is provided with a shelf and two cylinders and whose two sides are open and cell plates 13 which fill the inside of the shelf structure of the storage node 11 through the intermediary of a dielectric capacitor oxide film 12 and cover the storage node 11 are made to constitute a capacitor 14, where the capacitor 14 is formed striding a silicon oxide film 7 and a field oxide film 8. Therefore, the capacitor 14 can be formed on both the inside and the outside of the storage node 11 of shelf structure. By this setup, the capacitor 14 small in size and large in capacity can be realized.
申请公布号 JPH04167559(A) 申请公布日期 1992.06.15
申请号 JP19900295627 申请日期 1990.10.31
申请人 SANYO ELECTRIC CO LTD 发明人 UEDA KEIICHI
分类号 H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108 主分类号 H01L27/04
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