| 摘要 |
PURPOSE:To prevent a gap from being formed between an electrode and a protective film so as to protect a light emitting diode against deterioration in characteristics by a method wherein the protective film is provided so as to cover the surface of a semiconductor and a part around the electrode. CONSTITUTION:An ohmic electrode 2 of Au alloy or the like is deposited on an N-type AlGaAs clad layer 1, then Au is deposited for the formation of a bonding pad electrode 3, and an electrode pattern is formed through a photolithography method. Then, a protective film 4 of SiO2. or the like is formed on the whole surface of the N-type AlGaAs clad layer 1 including the electrode through a thermal decomposition method or a plasma CVD method, and then the protective film 4 located around the center of the electrode 3 is removed through a chemical etching method so as to leave the film 4 unremoved only on the peripheries of the electrodes 2 and 3, whereby the protective film 4 is patterned so as to cover the surface of the semiconductor and a part around the electrode. By this setup, a gap is prevented from being induced between the ohmic electrode 2 and the protective film 4, and the surface of an AlGaAs clad layer is protected against oxidation, whereby a light emitting diode of this design can be protected against deterioration in characteristics. |
