发明名称 |
RESIST COMPOSITION AND FORMATION OF RESIST PATTERN |
摘要 |
PURPOSE:To obtain a positive resist for ionizing radiation which is excellent in sensitivity and resolution and which can be alkali developed by forming a resist composition which consists of an alkali-soluble base resin and an axid generator which contains more than one kind of halogen substituent in its structural formula and a specific substituent. CONSTITUTION:An acid generator containing more than one kind of halogen substituent in its structural formula and a substituent indicated by -OCOC R1R2R3 or -COOC R1R2R3 has the effect of sufficiently inhibiting dissolution against alkali developers. When a resist prepared by addition of the dissolution- inhibiting acid generator to an alkali-soluble resin is exposed to ionizing radiation, halogen atoms are removed in radical form from a substituent containing halogen and hydrogen atoms are taken out of a remaining solvent so that the dissolution-inhibiting acid generator of an exposure portion is converted to hydrogen halide. The hydrogen halide in turn attracks the substituent indicated by -OCOC R1R2R3 or -COOC R1R2R3. As a result, COC R1R2R3 or COOC R1R2R3 in these substituents are removed by hydrolysis and converted to hydroxide groups and then polarity is greatly varied and a resist pattern of a positive acid can be obtained. |
申请公布号 |
JPH04166945(A) |
申请公布日期 |
1992.06.12 |
申请号 |
JP19900294706 |
申请日期 |
1990.10.31 |
申请人 |
FUJITSU LTD |
发明人 |
NAMIKI TAKAHISA;OIKAWA AKIRA;WATABE KEIJI;FUKUDA MANAMI |
分类号 |
G03F7/039;G03F7/075;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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