| 摘要 |
<p>PURPOSE:To obtain a manufacturing method of a reticle for manufacturing semiconductors, in which a defect such as a flaw and exfoliation is difficult to be caused and which is cleanable, by accumulating a phase shifter film to such thickness that an exposure light phase is reversed by 180 degrees in the circumference of a transmission region of the reticle, and using an inorganic film for a phase shifter material. CONSTITUTION:On a glass substrate 11 a chrome film 12 is formed, and thereon a phase shifter film13, for example silicon oxide, which exhibits a high transmissibility for exposure light, is accumulated to such thickness that a phase of the exposure light is reversed by 180 degrees. Then, resist for electron beam exposure is applied to the film 13 to form a resist pattern 14. Next, by using this as a mask, anisotropic etching is applied to the film 13 to form a phase shifter film pattern 15. Then, a polymer film formed on the film 12 is removed together with removal of the pattern 14. Isotropic etching is applied to the film 12 to form a chrome film pattern whose end portion is positioned inside an end portion of the pattern 15, thus manufacturing a reticle for semiconductor manufacturing.</p> |
