| 摘要 |
PURPOSE:To easily cope with an increase in the number of pins and miniaturization by forming a wiring pattern on the surface of a resin substrate integrally formed with a heat sink by plating and using one end section of the wiring pattern as a leading-out terminal. CONSTITUTION:A heat sink 1 which is provided for reducing a rise in the thermal resistance of a semiconductor element 4 associated with an increase in the power consumption of the element 4 is integrally formed with a resin substrate 8. In addition, a wiring pattern 9 having a total thickness of about 10mum is formed on the surface of the substrate 8 by successively forming a Cu base film, Ni film, and Au film by electroless plating. Each electrode 5 of the element 4 is connected with the inner terminal electrodes 11 of the wiring pattern 9 connected with leading-out terminals 10 by means of such metallic thin wires 6 as gold wires, etc. Therefore, a semiconductor device which has a structure in which the heat sink 1 can integrally be formed with the resin substrate 8 and can easily cope with an increase in the number of pins and miniaturization of the semiconductor element 4 can be obtained. |
