| 摘要 |
PURPOSE:To cut down the manufacturing term while enhancing the manufacturing yield by a method wherein the title manufacturing method is provided with the coating process of a conductor substrate with a semiconductor layer and the formation process of an element on the semiconductor layer. CONSTITUTION:A conductor substrate 10 comprising tungsten, molybdenum, etc., as a metal hardly mutual diffusing or reacting to a semiconductor is coated with a semiconductor layer in specific thickness of e.g. several microns using e.g. germanium as the semiconductor by vacuum evaporation or CVD process. Furthermore, when the conductive substrate 10 comprising a metal heated at several hundred deg.C is coated with germanium, a germanium layer 11 in high quality can be formed. Thus, a Schottky electrode 12 is formed on the surface of the semiconductor by ordinary element manufacturing method to manufacture a Schottky device for high frequency band. Through these procedures, an element can be manufactured by simple processes, and consequently the manufacturing time can be cut down and the manufacturing yield can be enhanced. |
