Target for cathodic sputtering - produced from partially reduced mixtures of indium oxide and tin oxide by hot pressing in inert protective gas

摘要

Target consists of partially reduced In oxide-Sn oxide mixtures with a density of more than 75% theorical density and specific electrical resistance of 0.1-0.001 ohm. Degree of redn. is 0.02-0.30, differing from the mean at no point on the target by more than 5%. Mixtures are hot pressed under inert protective gas between dies which consist of inert, non-reducing material. ADVANTAGE - High sputtering performance.