| 摘要 |
<p>A plasma reactor (10) uses a ring antenna (25) driven by RF energy (HF, VHF, or UHF) and produces a circularly polarized electromagnetic wave inside the ring. Inside the ring, this wave has a transverse circular electric field and a longitudinal magnetic field. A static magnetic field may be used with the E/M field (typically with direction perpendicular to the wave's electric field component). Placed adjacent to a dielectric window, dome, or bell jar (17), the above apparatus generates a high density, low energy plasma inside a vacuum chamber for etching metals, dielectrics and semiconductor materials (5). When operated at resonance (antenna (25) tuned to resonance with excitation frequency, and magnetic field tuned to resonance with excitation frequency), plasma density may be maximized. Auxiliary bias energy applied to the wafer support cathode (32C) controls the cathode sheath voltage and controls the ion energy independent of density. Various etch processes, deposition processes and combined etch/deposition processes (for example, sputter/facet deposition) are disclosed. Processing of sensitive devices without damage and without microloading can thus be achieved providing high yields. <IMAGE></p> |
