| 摘要 |
PURPOSE:To realize multi-stage wire bonding, enlarge the pad width and the pitch of a bonding part, and facilitate the connection of bonding wires, by substituting a bonding wire connection part at the tips of inner leads to metallized leads formed on an insulative frame of ceramic or the like. CONSTITUTION:Between a semiconductor chip 2 and inner leads 5, insulative frames 9, 10 are formed. Metallized leads 11-1-11-5, 12-1-12-5 wherein W metallization is plated with Ni and Au are formed on the insulative frame 9 and 10, respectively. The metallized leads 11-1-11-5, 12-1-12-5 are formed in stripe types with intervals. The metallized leads of the insulative frame 10 are arranged on the gaps of the metallized leads of the insulative frames 9. By using the insulative frames as stepping-stones in this manner, multilayered bonding can be realized. |
