发明名称 LDD metal-oxide semiconductor field-effect transistor and method of making the same.
摘要 <p>An improved metal oxide semiconductor field-effect transistor (MOSFET) has two diffused regions extending apart in opposite directions from under one and the other edge of the gate (203). At least one of the diffused regions is composed of a first least-doped, short section (204a;204b), a second lightly-doped, short section (207a;207b), and a third heavily-doped, long section (208a;208b). Either diffused region may be used as drain. The series-connection of least-doped and lightly-doped sections of the same longitudinal size or depth improves the current driving capability of the semiconductor device. Also, methods of making such MOSFETs are disclosed. &lt;IMAGE&gt;</p>
申请公布号 EP0489559(A1) 申请公布日期 1992.06.10
申请号 EP19910311183 申请日期 1991.12.02
申请人 NEC CORPORATION 发明人 OKABE, KAZUHIRO;SAKAI, ISAMI
分类号 H01L21/336;H01L29/78 主分类号 H01L21/336
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