| 摘要 |
PURPOSE:To transfer a circuit pattern to a photoresist film with high precision by a method wherein a dummy pattern being too fine to transfer it to the photo resist film during exposure is formed in a region for transmission of light. CONSTITUTION:A photo mask comprises a pattern 2 for shielding light formed by pattering a metallic film, such as chrome, and a metallic oxide film, formed on a glass base sheet 1 and a fine dummy pattern 5 formed in a region 3 for transmission of light. The pattern 5 is formed in the same process as that for a pattern 2 and too fine to transfer it to a photo resist film during exposure. During execution of exposure, luminosity of transmission light 4A in the region 3 is approximately uniformized. Thus, when a photo resist film 7 on a semiconductor base sheet 6 is exposed by the photo mask, the pattern 2 is faithfully transferred to a photo resist pattern 7A after development. This constitution forms a fine semiconductor element pattern with high precision. |
