| 摘要 |
PURPOSE:To lower an operating voltage and to improve emitted blue light intensity by realizing a light emitting element having novel p-n junction of gallium nitride compound semiconductor and an electrode leading structure concentrations. CONSTITUTION:A light emitting diode 10 has a sapphire board 1, and a buffer layer 2, a high carrier concentration n<+> type layer 3, a low carrier concentration n-type layer 4 and a p-type layer 5 are sequentially formed thereon. An electrode 7 connected to the layer 5 and an electrode 8 connected to the layer 3 are formed, and both are subjected to dielectric isolation due to a groove 9. The emitted light intensity of the diode 10 thus constructed is improved to specific value magnification as compared with that in which an i-type layer is connected to an n-type layer. Further, a driving voltage is lowered by introducing a p-type layer, and its irregularity is small. Thus, the p-n junction is realized to lower the driving voltage and to improve light emitting efficiency and luminance. |
