| 摘要 |
In a high frequency transistor power amplifier comprising a plurality of power transistors which are disposed in an annular arrangement, the input terminals of the transistors are connected to a common input through separate input matching circuits and a distributor circuit. The output terminals of the power transistors, on the other hand, are combined directly in a common output connection, without any intermediate matching circuits, this common output connection being connected to a single output matching circuit common to all the power transistors.
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