INTEGRATED CIRCUIT COMPRISING LOAD RESISTORS, ARRANGED AS THIN-FILM ELEMENTS ON THE FIELD OXIDE ZONES WHICH SEPARATE THE ACTIVE TRANSISTOR ZONES, AND PROCESSES FOR THE PRODUCTION THEREOF

摘要

20365-2775 In an integrated circuit containing MOS transistors and/or bipolar transistors, the load resistors, which are arranged as thin-film elements on the field oxide zones which separate the active transistor zones, consist of polycrystalline silicon which is formed simultaneously with gate electrodes and/or the emitter and base terminal zones of the bipolar transistors on a substrate which contains the integrated circuit. The structuring of the load resistors is carried by way of an oxide mask which serves as an etch stop during the structuring of the gate electrode composed of a double layer of polysilicon and a silicide of a refractory metal. As only the polysilicon of the gate layer without overlying silicide is used for the load resistors, the sheet resistance of the load resistors can be set independently of that of the gates.