METHOD FOR MAKING A SEMICONDUCTOR DEVICE BY DOPING WITH ARSENIC, OF AT LEAST 25 WT. % INTO A POLYSILICON LAYER

摘要

PCT No. PCT/JP90/00372 Sec. 371 Date Nov. 15, 1990 Sec. 102(e) Date Nov. 15, 1990 PCT Filed Mar. 20, 1990 PCT Pub. No. WO90/11618 PCT Pub. Date Oct. 4, 1990.A method for introducing an impurity into a polysilicon formed on an insulating film is described. A silicate glass layer (13) containing As is formed on a polysilicon layer (12) formed on an insulating film (2) and is thermally treated to introduce As into the polysilicon layer (12). The silicate glass layer (13) has a concentration of arsenic of not less than 25 wt. %, calculated as As2O3 and the thermal treatment is effected in an atmosphere of a mixed gas of N2 and O2 with an oxygen partial pressure ratio of 0.05-0.7 at not lower than 1000 DEG C. for not shorter than 60 minutes.