| 摘要 |
PURPOSE:To lower an operating voltage and to improve emitted blue light intensity by realizing a light emitting element having novel p-n junction of gallium nitride compound semiconductor and an electrode leading structure. CONSTITUTION:A light emitting diode 10 has a sapphire board 1, and a buffer layer 2, a high carrier concentration n<+> type layer 3, a low carrier concentration n-type layer 4 and an i-type layer 50 are sequentially formed thereon. A p-type layer 5 is formed on a predetermined region of the layer 50. A hole 15 is formed from the upper surface of the layer 5 to the layer 3 through the layers 50, 4, and an electrode 52 connected to the layer 3 through the hole 15 is formed on the layer 50. An electrode 51 to the layer 5 is formed on the layer 5. The electrode 52 to the layer 3 is subjected to dielectric isolation by means of the layer 50. Accordingly, the layer 5 is formed with a p-n junction longitudinally, and is subjected to dielectric insulator-isolated laterally by the layer 50. With the configuration, a driving voltage can be lowered, and emitted blue light intensity can be improved. |
