A member for a semiconductor apparatus for carrying or holding a semiconductor device, obtained by joining an aluminum nitride substrate and a radiating substrate, comprise an insulating member formed by an aluminum nitride sintered body to be provided thereon with the semiconductor device and a radiating member to be joined to the insulating member. A metal material for forming the radiating member has thermal conductivity of at least 120 W/mK and a thermal expansion coefficient within a range of 4 to 6.0 x 10-6/K-1. Preferably the material forming the radiating member is prepared by a tungsten alloy containing copper by not more than 5 percent by weight.
