发明名称 |
Method for depositing dielectric layers |
摘要 |
Disclosed is a method for forming a silicon dioxide layer on a substrate by radio-frequency deposition from a plasma comprising oxygen, argon, and tetraethyl orthosilicate (TEOS) or tetramethyl cyclotetrasiloxane (TMCTS). A negative bias is imparted to the substrate. The resulting ion bombardment induces surface migration. Because TEOS and TMCTS have a relatively high mean free path for surface migration, the filling of soft spots and key holes is promoted.
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申请公布号 |
US5120680(A) |
申请公布日期 |
1992.06.09 |
申请号 |
US19900555128 |
申请日期 |
1990.07.19 |
申请人 |
AT&T BELL LABORATORIES |
发明人 |
FOO, PANG-DOW;HUO, TAI-CHAN D.;YAN, MAN F. |
分类号 |
C23C16/40;C23C16/509;H01L21/31;H01L21/316;H01L21/768 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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