| 摘要 |
PURPOSE:To simplify a manufacturing process and embody a higher degree of integration by forming an electrically conductive thin film transistor designed to read memory cell on the upper part of a common gate electrode. CONSTITUTION:This semiconductor device comprises field oxide films 7 and 8, transistor's gate oxide film 9, source drains 11 and 12 of an N channel transistor, a gate electrode 13 of the N channel transistor, a gate electrode 14 of a thin film N channel transistor, a gate electrode of a P channel transistor, an aluminum bit line 20, source drains of the P channel transistor, an N channel diffusion region 23, a P channel diffusion region 24, a source drain 25 of a thin film N channel transistor, an aluminum power source line 26, an aluminum connection line 27, and an aluminum grounding line 28. In this manner, a thin film transistor designed to read memory cell is formed on the upper part of the common gate electrode 16. This constructions makes it possible to simplify the manufacturing process and embody a higher degree of integration. |
