| 摘要 |
PURPOSE:To eliminate a necessity of removing a gate insulating film at a contact part by an etching operation and to avoid an increase in the resistance at the contact part by a method wherein, after a silicon gate electrode has been formed, ions of a reducing metal are implanted into the gate insulating film at the contact part. CONSTITUTION:At least the following are provided: a process to implant ions of a reducing metal into a partial region 13 at a gate insulating film 3 after a silicon gate electrode 4 has been formed wholly on the surface of a semiconductor substrate 1 via the gate insulating film 3; a process to remove the silicon gate electrode 4 from one part of a region 14 into which the ions of the reducing metal have been implanted at least at the gate insulating film 3 to one part outside the region 14 by patterning said silicon gate electrode 4; and a process to form a diffusion region 10 after the surface of the semiconductor substrate 11 has been doped with impurities by making use of said silicon gate electrode 4 as a mask. For example, ions of Ti are implanted by making use of a resist film 6 as a mask; after that, an annealing operation is executed; a gate insulating film 3 is reduced; a conductive TiSixOy film 14 is formed. |
