| 摘要 |
PURPOSE:To prevent the crack, in a surface protective film, which is produced when an external lead is pressure-bonded and to enhance the reliability of a semiconductor device by a method wherein a barrier film is laminated on an interconnection, a gap is formed around an opening part in the surface protective film formed on the surface including the barrier film and a bump electrode is formed. CONSTITUTION:The following are provided: an interconnection 3 formed on an insulating film 2 formed on one main face of a semiconductor substrate 1; a barrier film 4 formed on the interconnection 3; a surface protective film 5 formed on the surface including the barrier film 4; an opening part 6 made in the surface protective film 5 on the barrier film 4; and a bump electrode 7 which is formed on the barrier film 4 and which has a gap between it and the surface protective film 5 around the opening part 6. For example, a barrier film 4 composed of a Ti film is formed on an Al interconnection 3, a silicon nitride film 5 is deposited on it, and an opening part 6 for bump-electrode formation use is made. Then, a copper film 9 is formed; after that, a photoresist film 10 is coated on the whole surface and patterned; an electroplating operation is executed to the copper film 9 which has been revealed by making an opening part which is smaller than the opening part 6 at the inside of the opening part 6; a bump electrode 7 is formed. |
