| 摘要 |
PURPOSE:To prevent generation of a malfunction due to a short-circuit of a base and an emitter by providing a step of forming a guard ring on the surface of a silicon oxide film on the outer periphery of a hole formed at the time of diffusing a base above a P-N junction between a base diffused layer and a semiconductor substrate. CONSTITUTION:A silicon oxide film 2 on the surface of a base contact 8 on a base diffused layer 8 and the surface of an emitter contact 10 of an emitter diffused layer is selectively etched, Al is deposited on the parts to form a base electrode 4 and an emitter electrode 6. In this case, simultaneously, Al is deposited on the surface of the film 2 on the outer periphery of the part etched at the time of forming a base diffused layer 3 above a P-N bond between the layer 3 and a semiconductor substrate 1 to form a guard ring 7. The ring 7 is connected to the electrode 6 to be the same potential as that of the electrode 6. Thus, a leakage is prevented, electrostatic damage is prevented, yield is improved and reliability can be enhanced. |
