| 摘要 |
PURPOSE:To reduce a forward rising voltage VF, to raise the forward rising voltage VF and to increase the life of a main battery by providing second barrier metal to be Schottky-junction to the surface of an anode (or cathode) region for forming a P-N junction with a base. CONSTITUTION:An SBDE(Schottky barrier diode) 37 is obtained by selectively opening an oxide film 36, depositing and selectively removing first barrier metal 38 for forming a Schottky barrier to the surface of silicon. A substrate 31 becomes a cathode, and the metal 28 becomes an anode. A P-N diode 40 is obtained by selectively diffusing a P-type anode region 41 on the substrate 31, and the base 31 is an anode. A second barrier metal 41 is provided on the region 41. An anode electrode 43 of the diode 40 is formed on a second barrier metal 42. The metal 42 is provided to generate a series resistance due to a barrier with the region 41, and a forward rising voltage VF of the diode 40 is raised. |
