| 摘要 |
PURPOSE:To obtain a highly crystalline photomask material by annealing a metallic silicide film formed on a transparent glass substrate by sputtering, etc. to form the metallic silicide film having uniform crystallinity and using the same as the photomask material. CONSTITUTION:The metallic silicide film 3 consisting of molybdenum Mo, titanium Ti, etc. is formed on the transparent glass substrate 1 consisting of quartz, etc. by sputtering, etc. The film 3 is then annealed for a short period at a high temp., for example, for several tens seconds at 900 deg.C or the film 3 is annealed by an IR laser 5 to form the metallic silicide film 4. A resist is then coated on the film and thereafter a required pattern is drawn thereto by an electron beam, etc. Such resist is subjected to a developing stage to form a resist pattern. The metallic silicide film is etched away with such resist pattern as a mask and thereafter the resist pattern is removed and the required photomask is formed. |
