| 摘要 |
PURPOSE:To prevent fusion of an outer fuse in which a plurality of channels are not simultaneously used by providing a resistor to be fused by a large current between a semiconductor substrate and a substrate potential connecting terminal. CONSTITUTION:A contact 11 is opened at an insulating film 4 covering an insulating region 5 formed on a P-type silicon substrate 1. After the entire surface is sputtered with aluminum, etc., metal wirings 7 are formed by selectively etching. In this case, part of the wiring 7 between a bonding pad 8 to become a substrate potential supply terminal and the contact 11 is thinned to form a resistor 12. If an overcurrent exceeding an allowable range flows from the pad 8 to the contact 11, the width of the resistor 12 is decided so as to fuse the resistor 12. The substrate current at the normal time is about 5mA. If the resistor 12 is so formed as to be fused by about 500mA, a voltage drop is small, and there is no problem. Thus, even if one semiconductor integrated circuit is damaged, it can be stopped only by fusion of the resistor 12. |
