摘要 |
PURPOSE:To improve the degree of integration of a semiconductor chip by forming pads on an element region on the side inner than through-holes connected to the wirings of input-output circuits. CONSTITUTION:Wirings 3 connected to input-output circuits and led out near the peripheral section of a semiconductor chip are formed onto an insulating film 2 shaped onto a semiconductor substrate 1, and an layer insulating film 4 is formed to a surface including the wirings 3. Wirings 6 bonded with the wirings 3 through the through-holes 5 formed to the layer insulating film 4 near the terminals of the wirings 3 and extended on the side of the semiconductor chip inner than the through-holes 5 are formed, and pads 7 are shaped onto the element region of the semiconductor chip while being connected to the wirings 6. A protective film 8 is deposited on a surface including the pads 7, and the centers of the pads 7 are exposed through selective etching. |