| 摘要 |
<p>PURPOSE:To prevent the continuation of an X-ray absorber to length or more, in which impermissible strain is generated from the difference of the physical values and internal stress of the X-ray absorber and an X-ray transmissive film by forming a thin slit except a circuit pattern to the X-ray absorber shaped onto the thin-film-shaped X-ray transmissive film deposited at the central section of a mask substrate. CONSTITUTION:An X-ray transmissive film 11 composed of SiN in thickness of 2mum is formed onto a mask substrate using a silicon water. Au in thickness of 0.05mum is formed onto the X-ray transmissive film 11 as a conductive layer. A desired circuit pattern is shaped to a resist in thickness of 1mum applied onto the conductive layer through electron beam lithography. When there are X-ray absorbers 12, electron beam lithography is conducted so that resist walls in width of 0.08mum are left in the sections of the X-ray absorbers 12 at every 50mum. The X-ray absorbers 12 are formed through electrodeposition of Au in thickness of approximately 0.7mum after development.</p> |
