| 摘要 |
PURPOSE:To prevent the unbalance of drain capacity due to a positioning shift of a mask, by surrounding the drain region of FF by a gate region. CONSTITUTION:In parallel to gate electrodes 14 and 15, gate region 20 is so arranged that even if a positioning shift of a mask is made, it will overlap with regions 16 and 17. Then, it is connected to an input terminal applied with signal S for the determination of a voltage. Consequently, signal S has a lower voltage than those of drain regions 16 and 17 without fail, so any inversion layer is not formed under gate region 20, thereby eliminating the need to consider the unbalance of the capacity of the region under gate 20. |
