| 摘要 |
PURPOSE:To obtain a hydrogen detecting element having excellent detecting sensitivity by consisting said element of a pair of electrodes in contact with an oxide semiconductor having specific constituting components and constituting one of the electrodes of Pt or Pd. CONSTITUTION:The oxide semiconductor 2 consisting of (ZnO)1-a(Al2O3)a, (ZnO)1-b(Zro2)b, (Fe2O3)1-c(TiO2)c, Ba1-dMdTiO3 (where M: at least >=1 kinds among La, Ce, Nd, Y, Sb, Gd and Bi) or BaTi1-eMe'O3 (where Me'; at least >=1 kinds among Ta, Nb and W) as the main constituting element is formed on the surface of the substrate 1 consisting of an electrical insulator such as Al2O3 and the non-ohmic electrode 3 consisting of Pt or Pd and the ohmic electrode 4 consisting of Ag-Sn, etc. are formed on the semiconductor 2. The numerical symbols a, b, c, d, e, are respectively 0<=a<=0.15, 0<=b<=0.1, 0<=c<=0.08, 0.0001<=d<=0.007, 0.0005<=e<=0.005. The hydrogen detecting element having the excellent sensitivity is thus obtd. |
