发明名称 Ohmic electrode material for semiconductor ceramic - comprising aluminium@, silicon@ and glass frit
摘要 An ohmic electrode material for a semiconductor ceramic contains 48-96 (72-96) wt.% Al and 4-52(4-28) wt.% Si. Also claimed is a semiconductor ceramic element contg. a semiconductor ceramic and an ohmic electrode of the above compsn.. USE/ADVANTAGE - The electrode material is used for semiconductor ceramics with an ohmic contact and ceramic elements, e.g. thermistors with positive temp. coeffts., varistors and resistors. The material has good ohmic contact and good resistance to moisture.
申请公布号 DE4139157(A1) 申请公布日期 1992.06.04
申请号 DE19914139157 申请日期 1991.11.28
申请人 MURATA MFG. CO., LTD., NAGAOKAKYO, KYOTO, JP 发明人 SASAKI, KIYOMI, NAGAOKAKYO, KYOTO, JP
分类号 C22C21/02;C03C8/04;C03C8/10;C03C8/18;H01B1/02;H01B1/06;H01B1/16;H01C7/02;H01C7/10;H01L29/24;H01L29/45 主分类号 C22C21/02
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