| 摘要 |
PURPOSE:To form a fine hole pattern on an exposing mask provided with a phase inversion layer by forming the hole pattern at a cross point of end parts extending, respectively, in first and second directions. CONSTITUTION:An insulation film is formed entirely on the surface of a DRAM cell, a negative resist is applied thereon, and then first exposure is conducted using a first exposing mask 24 having an end part 25 of a phase inversion layer, i.e., a phase inverting means, in the longitudinal direction. Subsequently, second exposure is conducted using a second exposing mask 26 having an end part 27 of the phase inversion layer in the lateral direction. Consequently, only the cross point of the phase inverted end part 25 of first exposing mask 24 and the phase inverted end part 27 of second exposing mask 26 is left in a state where the intensity of exposing light is low, and the resist is removed from the cross point when the negative resist is developed. Subsequently, the insulation layer is removed through anisotropic etching thus forming a hole through which n<+> layer of active region 21 is exposed. |
