| 摘要 |
<p>A heat sink for use with electronic circuits is formed from a synthetic diamond layer, having a smooth surface for good thermal contact, backed by an optional bonding layer and a metal with good thermal transport properties. The surface of a substrate (1), e.g. a Si disc 3 mm thick, is well polished for good contact and finely scratched to provide growth points. The substrate is then coated with a synthetic diamond layer (2) approx. 65 micon thick by CVD techniques. A metallic bonding layer (3) consisting of e.g. a multi-layer of Ti-Pt-Au may be applied to the diamond layer. This is then backed by a suitable metal coating (4) with good thermal properties, e.g. Cu, applied by electro-plating techniques, with thickness dependent on the required properties of the heat sink.</p> |
