SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THEREFOR

摘要

The method comprises the steps of etching an oxide film (7) by using a contact mask, to form an area of a metal electrode and depositing a metal electrode (4,5) by using a metal mask. The etching process is performed so that the oxide film remains on a partion of the metal electrode depositing region between the electrode insulating oxide film (3). The metal depositing process is performed so that the metal materials are deposited on the impurity diffusion layer (2) with surrounding the metal electrode depositing position between the oxide film (3). A wire bonding apparatus detects the position of the electrode accurately by using the electrode structure manufactured by this method.