| 摘要 |
PURPOSE:To obtain a semiconductor memory device which is provided with a large mechanical strength which does not call for any increase in the number of manufacturing processes in conformity with the number and a high storage capacity even when a plurality of blades are provided by comprising an accumulated electrode connected with a first conducting film having an opening section inside and a source region or a drain region of a transfer transistor on one end, and a middle section connected with a first conducting film on one end and a second conducting film on the other end. CONSTITUTION:When forming a second opening section B in order to constitute an accumulated electrode, a side wall 34 formed on the side wall of a first opening section A of a fourth film 30 is required to be used as a mask. Only the thickness of the side wall may be reduced so as to meet the demand. Even when a plurality of blades are called for, which comprise fins, there is no need to increase a process which forms an opening section. Furthermore, there is no need to control the thickness of a fourth film used as an etching mask by a third film 29, which makes it possible to relax film formation requirements. In addition, a memory device increases its mechanical strength and prevents deformation of breakdown induced by heat treatment. |
