发明名称 PATTERN FORMING RESIST MATERIAL
摘要 PURPOSE:To obtain an extremely fine pattern by providing an alkali-soluble polymer compound protected by a protective group decomposed with the specific ratio of an alkali-soluble functional group by acid or base and compound generating acid or base via the radiation of radioactive rays. CONSTITUTION:In an alkali-soluble polymer compound (a) protected by a protective group decomposed with an alkali-soluble functional group 5-50% by acid or base, the relative action between the functional group and a substrate is generated by the existence of the functional group with high polarity, and the adhesion to the substrate is improved. Acid or base is generated at an exposure section, part of the protective group of the functional group offering the alkali- solubility of the compound (a) is decomposed, and the solubility of the compound (a) is decomposed, and the solubility of the exposure section of a composition material is improved. Part of the alkali-soluble section of the compound (a) is protected at a nonexposure section, and the solubility is made extremely lower than that of the well-known unprotected alkali compound. The solubility of the exposure section is sharply improved.
申请公布号 JPH04158363(A) 申请公布日期 1992.06.01
申请号 JP19900285465 申请日期 1990.10.22
申请人 MITSUBISHI ELECTRIC CORP 发明人 KUBOTA SHIGERU;KUMADA TERUHIKO;TANAKA SACHIKO;HORIBE HIDEO;HIZUKA YUJI
分类号 G03F7/039;G03F7/004;H01L21/027 主分类号 G03F7/039
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