发明名称 THIN FILM RESISTANCE CIRCUIT
摘要 <p>PURPOSE:To adjust a resistance value by forming on an insulating substrate a metal oxide thin film comprising a metal oxide containing palladium, and further providing a resistor part composed of the metal oxide thin film and a conductor part including an electroless plating coated film formed on the metal oxide thin film. CONSTITUTION:There is formed on an insulating substrate 1 an ITO-Pd thin film 8 with desired surface resistance. The ITO-Pd thin film 8 is patterned by a photolithography process to simultaneously form a resistor pattern formation region 9, as a desired resistance part and a conductor pattern formation region 92 as a conductor part. The conductor pattern formation region 92 is subjected to an electroless Ni plating to form an electroless Ni plated layer 11 for reduction of its resistance and hence for formation of conductor patterns 121, 122. More specifically, Pd in the ITO-Pd thin film 8 is used as a nucleus and Ni is selectively separated on the conductor pattern formation region 92 through the electroless Ni plating to form the electroless Ni plated layer 11.</p>
申请公布号 JPH04157788(A) 申请公布日期 1992.05.29
申请号 JP19900281798 申请日期 1990.10.22
申请人 JECO CO LTD 发明人 HATANO YUICHI;KASAI HAYAJI;ITO EIJI
分类号 H01C7/00;H05K1/16 主分类号 H01C7/00
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