发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To achieve high speed so that an output buffer which one bit memory data corresponding to an upper address of a memory cell inputs is selected as an output target by connecting an output side of each output buffer in Wired OR in X1 bit mode. CONSTITUTION:In X1 bit mode, output sides of a plurality of output buffers 5 - 8 are connected in Wired OR for forming a selector with an output buffer itself and an output buffer which an upper level address data inputs is selected. In X multiple bit mode, data is output independently from the output buffers 5 - 8. Then, no extra things are provided at the input side of the output buffer, thus preventing speed-up between an I/O sense amplifier and the output buffer. Therefore, it becomes possible to switch between X 1 bit mode and multiple bit mode configurations easily and to enable request for high speed and multiple types to be met.
申请公布号 JPH04157695(A) 申请公布日期 1992.05.29
申请号 JP19900283093 申请日期 1990.10.19
申请人 SANYO ELECTRIC CO LTD 发明人 WADA ATSUSHI
分类号 G11C11/409;G11C11/401;H01L21/82;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C11/409
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