STRUKTURIERTER HALBLEITERKOERPER.

摘要

Structurised semiconductor device has different doped Si monocrystal semiconductor zones bounded by barrier zone(s). The novel features are that: (a) there is a SiO2 film on at least one Si monocrystalline semiconductor zone, the thickness of this film being such that it can be removed easily down to the Si monocrystal by a low energy method; (b) Si is deposited on the SiO2 film and Si monocrystalline semiconductor zone exposed by the action of energy; and (c) a barrier zone consisting (partly) of polycrystalline Si is deposited on the SiO2 film.