FET with semiconductor in channel between drain and source electrode - whose length for drain-source current has irregular cross=section between both electrodes

摘要

In the FET semiconductor (31) a channel is formed between the drain and source electrodes for the drain-source current. The length (l) available for the drain-source current between the source (5) and drain (0) electrodes is of uneven cross-section. Pref. the cross-sectional change is non-linear over the channel length, as well as being irregular. The channel-forming semiconductors body may have at least one region of restricted cross-section, the longest restriction being measured by the drain electrode. At the transition point (22) to the drain electrode, the channel cross-section is typically larger. ADVANTAGE - Improved FET voltage strength and reaction speed.