| 摘要 |
<p>An electronically wavelength-tunable distributed-feedback quantum well semiconductor laser (10) includes a semiconductor substrate (12), an optical waveguide layer (16) on the substrate, and a multiple quantum well structure section (20) arranged on the optical waveguide layer and including first and second semiconductor layers (21, 23, 27, 29; 22, 24, 26, 28) which are alternately laminated on each other. The multiple quantum well structure section change regionally in the lamination number of the first and second layers, thereby defining a series of active regions with different gain versus carrier characteristics. A plurality of electrodes (40a, 40b, 40c) are formed on the upper portion of the multiple quantum well structure section (20) positionally in association with the series of the activated regions. <IMAGE></p> |
