| 摘要 |
<p>A semiconductor memory device in which dual-ports (A,B) are provided for selecting a specific memory cell from a memory cell matrix includes a driving state detection unit(6) for detecting the state of driving word lines of the two ports and delivering a detection signal based on the detection, where one of the ports is in the writing state with regard to the memory cell, and a bit line short-circuiting unit (212,222,232,242) responsive to the detection signal from the driving state detection unit for realizing a short-circuit between predetermined bit lines. <IMAGE></p> |
