HIGH BREAKDOWN STRENGTH AMORPHOUS SILICON THIN FILM TRANSISTOR,申请号JP19900277811-传众专利搜索

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发明名称	HIGH BREAKDOWN STRENGTH AMORPHOUS SILICON THIN FILM TRANSISTOR
摘要
申请公布号	JPH04154128(A)	申请公布日期	1992.05.27
申请号	JP19900277811	申请日期	1990.10.18
申请人	FUJI XEROX CO LTD	发明人	ASAI ICHIRO;TOMONO TAKAO
分类号	H01L21/3205;H01L21/336;H01L23/52;H01L27/12;H01L29/78;H01L29/786	主分类号	H01L21/3205
代理机构		代理人
主权项
地址

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