发明名称 SILICON NITRIDE SINTERED COMPACT AND ITS PRODUCTION
摘要 PURPOSE:To obtain the title sintered compact improved in high-temperature strength and oxidation resistance by heat treatment of a specific Si3N4 sintered compact in a non-oxidative atmosphere containing SiO to effect depositing silicate glass. CONSTITUTION:A mixture comprising (A) 85-99mol% of Si3N4, (B) 0.5-15mol% of an oxide (RE2O3) of group IIIa element and (C) such an amount of SiO2 as to be 0.5-14.5mol% whose oxygenic content is obtained by subtracting the oxygen quantity stoichiometrically bound as RE2O3 from the total amount of oxygen in sintered compact, is formed and then calcined at 1600-2000 deg.C in a non-oxidative atmosphere into a sintered compact made up of (1) Si3N4 crystal phase and a grain boundary phase consisting of glass phase at least composed of Si3N4, RE2O3 and SiO2 and/or crystal phase. Then, this sintered compact is heat-treated at 1300-1900 deg.C in a non-oxidative atmosphere containing SiO to effect depositing silicate glass on the surface layer of the sintered compact and also depositing the surface layer of 1-100mum thickness having the contents of both oxygen and silicon higher than those in the inside.
申请公布号 JPH04154667(A) 申请公布日期 1992.05.27
申请号 JP19900277280 申请日期 1990.10.15
申请人 KYOCERA CORP 发明人 YOKOYAMA KIYOSHI
分类号 C04B35/584;C04B35/58 主分类号 C04B35/584
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