发明名称 APPARATUS AND METHOD FOR TREATMENT OF SUBSTRATE
摘要 PURPOSE:To execute a safe and efficient cleaning operation by using a fluid in small quantities and to eliminate a contamination by a method wherein, when only one face of a flat boardlike substrate for a semiconductor device or for a liquid-crystal display device is treated with a liquid, a plurality of through holes which are passed toward the rear form one face of a part faced with the substrate are made in a fluid- holding utensil, for liquid use, which is faced with the treatment face of the substrate so as to be close to the face. CONSTITUTION:A silicon wafer 112 to be treated is placed on a substrate support stand 111 made of quartz; and a treatment liquid holding utensil 113 which has been bridged on both end parts of the support stand 111 is installed by keeping a prescribed interval from the water 112. In this constitution, a plurality of through holes 110 are made in a part faced with the wafer 112 of the holding utensil 113. An apparatus constituted in this manner is immersed in a mixed liquid of H2SO4 and H2O2 in a mixture ratio of 10:1; and an interval part 114 between the holding utensil 113 and the wafer 112 is filled with a treatment liquid 115 by means of surface tension. A lamp heater 116 is arranged and installed at the lower side of the support stand 111; the holding utensil 113 made of carbon is heated to 150 to 200 deg.C; the temperature of the treatment liquid 115 is raised; and a contamination or the like which has adhered to the wafer 112 is removed.
申请公布号 JPH04154122(A) 申请公布日期 1992.05.27
申请号 JP19900277677 申请日期 1990.10.18
申请人 TOSHIBA CORP 发明人 OKUMURA KATSUYA
分类号 G03F7/30;C25D5/02;C25D7/12;H01L21/00;H01L21/027;H01L21/30;H01L21/304;H01L21/60 主分类号 G03F7/30
代理机构 代理人
主权项
地址