发明名称 |
Electrostatic chuck. |
摘要 |
<p>An electrostatic chuck for electrostatically holding a wafer (1) is provided in a vacuum chamber (10) formed in a magnetron plasma etching apparatus. The electrostatic chuck has a base member (21), a first insulating layer (41) provided on the base member and made of polyimide, a second insulation layer (42) made of A l N, a conductive sheet (44) provided between first and second insulation layers (41, 42), and an adhesive layer (43) made of a thermosetting resin and adhering the first insulating layer (41) to the second insulating layer (42). The wafer is placed on the second insulating layer (42), and power is supplied from a high voltage power supply (24) to the conductive sheet (44) via a feeding sheet (22), thereby creating static electricity and hence a coulombic force for holding the wafer (1) on the second insulating layer (42). <IMAGE> <IMAGE></p> |
申请公布号 |
EP0486966(A1) |
申请公布日期 |
1992.05.27 |
申请号 |
EP19910119528 |
申请日期 |
1991.11.15 |
申请人 |
TOKYO ELECTRON LIMITED;KABUSHIKI KAISHA TOSHIBA |
发明人 |
NOZAWA, TOSHIHISA;ARAMI, JUNICHI;KUBOTA, SHINJI;HASEGAWA, ISAHIRO;OKUMURA, KATSUYA |
分类号 |
B23Q3/15;H01L21/683;H02N13/00 |
主分类号 |
B23Q3/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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