| 摘要 |
PURPOSE:To enhance resolution in the case of exposure to the i-line of 365nm wavelength by incorporating an alkali-soluble resin and an ester of 1,2- naphthoquinone-(2)-diazido-6-sulfonic acid with one of alcohols and phenols as essential components. CONSTITUTION:The photoresist composition comprises the alkali-soluble resin and the ester of 1,2-naphthoquinone-(2)-diazido-6-sulfonic acid with one of alcohols and phenols or the amido of the 1,2-naphthoquinone-(2)-diazido-6-sulfonic acid with one of organic amines as essential components, thus permitting the composition to be high in transparency to the i-line, very much in solubility difference between exposed parts and unexposed parts, to have absorption wavelength on the longer wavelength side as compared with the conventional positive type photoresists and therefore, to obtain high sensitivity to argon laser beams to be obtained. |
