| 摘要 |
PURPOSE:To enable to perform a high density integration by a method wherein a polycrystalline semiconductor film and an insulating film are superposed in a self- matching manner. CONSTITUTION:After the double-layer film, consisting of a single crystal or polycrystalline silicon film 22 and a silicon nitride film 23, has been formed on the upper surface of a silicon semiconductor substrate 21, the double-layer film is selectively removed and a channel region 24 is formed. Then, a silicon oxide film 25 is formed and after the silicon nitride film 23 has been removed, a silicon oxide film 26 is formed and then an aperture section 27 is provided. A silicon oxide film 28 is formed and then a source and drain diffusing regions 29 and 30 are formed. Then, aperture sections 31 and 32 are provided on the silicon oxide film 26 and the electrodes 34 and 35, to be used for a gate electrode 33 and a source and drain, are formed. |
