| 发明名称 |
METHOD FOR FORMING SHOTTKY DIODE |
| 摘要 |
A method for forming a diode provided with electrodes and a semiconductive layer. Such method comprises applying ion beam irradiation to a substrate having a protruding portion at a desired position for monocrystalline diamond formation. In this manner the substrate is and subjected to surface modification thereby effecting a process for diamond crystal growth on the substrate. |
| 申请公布号 |
CA2030825(A1) |
申请公布日期 |
1992.05.27 |
| 申请号 |
CA19902030825 |
申请日期 |
1990.11.26 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
YONEHARA, TAKAO;KAWARADA, HIROSHI;MA, JING S.;HIRAKI, AKIO |
| 分类号 |
H01L21/04;H01L21/20;H01L29/16;H01L29/47;H01L29/872 |
主分类号 |
H01L21/04 |
| 代理机构 |
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代理人 |
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