| 摘要 |
PURPOSE:To obtain a good contact hole without influencing other parts by stopping an etching operation by using a newly formed semiconductor film when the contact hole is made in an oxide film by the etching operation by a method wherein another semiconductor film which is of a certain thickness or more is formed in a contact part constituting a semiconductor device. CONSTITUTION:A first semiconductor layer 12 used to form a channel region 23 is covered with an oxide film 16; the oxide film 16 is etched selectively; a contact hole 15 is made; and the semiconductor layer 12 is revealed in the following manner. That is to say, before the hole 15 is made, a second semiconductor layer 17 which is of a certain thickness is formed on the film 12 in parts other than the hole 15 to be made, and a gate oxide film 13 is formed here. After that, an etching operation is executed; the revealed film 12 is removed, and the contact hole 15 is made. Since the thick semiconductor layer 17 exists in other parts at this time, the film 12 is left as it is. Even when a third semiconductor layer 22 is applied onto the whole surface, it comes completely into contact with only the layer 12 inside the hole 15. |
